| PART |
Description |
Maker |
| MX25L12805D |
128M-BIT [x 1] CMOS SERIAL FLASH
|
http://
|
| MX25L12835FMI-10G MX25L12835FM2I-10G MX25L12835FZ2 |
3V, 128M-BIT [x 1/x 2/x 4] CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25L12835FMI10G MX25L12835FM2I10G MX25L12835FZ2I1 |
3V 128M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MBM29XL12DF-80 MBM29XL12DF MBM29XL12DF-70 E520901 |
From old datasheet system
PAGE MODE FLASH MEMORY CMOS 128M BIT
|
FUJITSU[Fujitsu Media Devices Limited]
|
| K3P9VU1000A-YC |
128M-Bit (16Mx8 /8Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| 5962-8766505YA 5962-8766503YA 5962-8766507UA 5962- |
Complete High-Speed CMOS, 12-Bit ADC
CMOS, 8-Bit-Compatible, 12-Bit DAC
CMOS 12-Bit Buffered Multiplying DACs
16-Bit Microprocessor 16位微处理
|
Electronic Theatre Controls, Inc.
|
| MX25L12835E MX25L12835EMI-10G MX25L12835EZNI-10G |
128M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
HIGH PERFORMANCE SERIAL FLASH SPECIFICATION
|
Macronix International
|
| HY5V26CF HY5V26CLF |
8Mx16|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M 8M × 16位| 3.3 | 4K的| 6/K/H/8/P/S |特别提款权的SDRAM - 128M
|
Vishay Intertechnology, Inc.
|
| K9K1G16U0A |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 128M的8 64米16位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
| MC-4R256FKE8S-840 |
Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT) 128M X 18 DIRECT RAMBUS DRAM MODULE, DMA160
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| MC-4R256CEE6C-845 MC-4R256CEE6B MC-4R256CEE6B-653 |
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
128M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184
|
http://
NEC[NEC]
NEC Corp.
|
| K9F1G08D0M K9F1G08Q0M K9F1G16D0M K91G08Q0M K9F1G16 |
64MB & 128MB SmartMediaTM Card
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
